Accession Number : ADA263360


Title :   Low Voltage Electron Beam Lithography.


Descriptive Note : Monthly rept. for Oct 1992


Corporate Author : STANFORD UNIV CA CENTER FOR INTEGRATED SYSTEMS


Personal Author(s) : Browning, R ; Pease, R F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a263360.pdf


Report Date : Oct 1992


Pagination or Media Count : 5


Abstract : The contract has three parts covering aspects of high precision electron beam lithography: (1) Comprehensive computer modelling of the electron beam tool; (2) Experimental determination of the properties of sources, columns, and targets; and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques.


Descriptors :   *LITHOGRAPHY , *ELECTRON BEAMS , GALLIUM ARSENIDES , SCATTERING CROSS SECTIONS , ELECTRON EMISSION , WAFERS , PHOTOCATHODES , LOW VOLTAGE , SILICON , ELECTRON ENERGY , SINGLE CRYSTALS , ETCHING


Subject Categories : Printing and Graphic Arts
      Particle Accelerators


Distribution Statement : APPROVED FOR PUBLIC RELEASE