Accession Number : ADA263204


Title :   Growth, Characterization and Device Development in Monocrystalline Diamond Films


Descriptive Note : Quarterly letter rept. 1 Jan-31 Mar 1993


Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH


Personal Author(s) : Davis, R F ; Glass, J T ; Nemanich, R J ; Trew, R J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a263204.pdf


Report Date : 31 Mar 1993


Pagination or Media Count : 24


Abstract : Silicon-germanium films have been grown by electron-beam deposition on naturally occurring p-type semiconducting diamond(OO1) substrates. As evidenced by low-energy electron diffraction and scanning tunneling microscopy, the SiGe layers were polycrystalline. Corresponding current-voltage (I-V) measurements conducted at room temperature demonstrated the formation of a low- barrier rectifying contact. Consistent with the observed low-barrier height, the I-V measurements recorded at 300 deg C exhibited ohmic-behavior. In addition, subsequent post-growth annealing of the SiGe contacts at 850 deg C in ul tra- high vacuum showed an apparent degradation in the I-V characteristics. Microwave performance of p-type diamond MESFET's is under investigation. A simulation program is being developed to enable a realistic evaluation of diamond MESFETs for high temperature and RF power applications. The program currently accounts for incomplete activation and will eventually account for all physical phenomena believed to be significant, including thermal and breakdown effects.... Diamond thin films, Device modeling, MESFET, MOSFET, JFET, FET, Bias, Acceptor impurity, Microwave performance, Pisces-IEB, Teflon, SiGe, P-Type diamond, I-V measurements.


Descriptors :   *THIN FILMS , *DIAMONDS , *CRYSTAL GROWTH , SCANNING , SIMULATION , MEASUREMENT , ANNEALING , ACTIVATION , MICROWAVES , IMPURITIES , POWER , BARRIERS , SILICON , LOW ENERGY , DIFFRACTION , ELECTRON BEAMS , DEPOSITION , MICROSCOPY , ROOM TEMPERATURE , HIGH VACUUM , TETRAFLUOROETHYLENE RESINS , POLYCRYSTALLINE , FISHES , HEIGHT , BIAS , GERMANIUM , ELECTRON DIFFRACTION , TUNNELING , BEHAVIOR , SUBSTRATES , VOLTAGE , FILMS , DEGRADATION , LAYERS , HIGH TEMPERATURE , ENERGY


Subject Categories : Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE