Accession Number : ADA262850


Title :   A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond


Descriptive Note : Professional paper,


Corporate Author : NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA


Personal Author(s) : Moazed, K L ; Zeidler, J R ; Taylor, M J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a262850.pdf


Report Date : 01 Sep 1990


Pagination or Media Count : 11


Abstract : Techniques have been developed to produce ohmic contacts to naturally occurring boron doped semiconducting diamond. Thin films of Mo, Mo/Au, and Mo/Ni/ Au deposited on diamond produced adherent ohmic contacts after annealing at 950 degrees LC. A thermally activated solid state reaction which produces a refractory carbide precipitate at the diamond/ metal interface is the principal factor in affecting the properties of the contacts. the interface reaction has been characterized using Auger electron spectroscopy, scanning electron microscopy, x-ray diffraction, metallography, and I-V measurements.


Descriptors :   *DIAMONDS , *SEMICONDUCTING FILMS , *METAL CONTACTS , SCANNING , THERMAL PROPERTIES , REPRINTS , MEASUREMENT , ANNEALING , CARBIDES , ELECTRON MICROSCOPY , CHEMICAL REACTIONS , PRECIPITATES , METALLOGRAPHY , SOLID STATE CHEMISTRY , ELECTRON SPECTROSCOPY , AUGER ELECTRON SPECTROSCOPY , BORON , GOLD , DOPING , NICKEL , DIFFRACTION , SEMICONDUCTORS , MOLYBDENUM , ACTIVATION , INTERFACES , X RAY DIFFRACTION , FABRICATION


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Metallurgy and Metallography
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE