Accession Number : ADA262602


Title :   Luminescence Study of Ion-Implanted and MBE-Grown Er-Doped GaAs and A1(x)Ga(1-x)As


Descriptive Note : Doctoral thesis


Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSONAFB OH SCHOOL OF ENGINEERING


Personal Author(s) : Colon, Jose E


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a262602.pdf


Report Date : Mar 1993


Pagination or Media Count : 275


Abstract : The excitation and de-excitation mechanisms of the 1.54 microns emissions, from ion implanted and MBE grown GaAs:Er and A1xGa1-xAs:Er, were studied through luminescence experiments. Experimental techniques included photoluminescence, time resolved photoluminescence, and selective excitation photoluminescence. The Er(3+) emissions were studied as a function of Er concentration, aluminum mole friction, n- and p-type doping level, and annealing temperature. In addition oxygen co-doping studies were done in order to determine the role played by oxygen in the Er(3+) luminescence.


Descriptors :   *GALLIUM ARSENIDES , *ALUMINUM GALLIUM ARSENIDES , *ION IMPLANTATION , *LUMINESCENCE , CATIONS , EXCITATION , PHOTOLUMINESCENCE , THESES , EPITAXIAL GROWTH , SEMICONDUCTORS , MOLECULAR BEAMS , DOPING , ERBIUM


Subject Categories : Inorganic Chemistry
      Crystallography
      Atomic and Molecular Physics and Spectroscopy
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE