Accession Number : ADA262361


Title :   Development of Model Based Magnetic LP-LEC Growth of Large Diameter GaAs


Descriptive Note : Final rept. 15 Jun 91-14 Jun 92


Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Witt, August F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a262361.pdf


Report Date : 14 Jun 1992


Pagination or Media Count : 22


Abstract : The objective of this research was to explore the range of analytical information on the defect structure of doped and semi-insulating GaAs obtainable from computational, non-invasive, near infrared absorption analysis. Motivation for this research was provided by the realization that the establishment of meaningful property specifications for device materials is contingent on noninvasive defect analysis executable in a fabline environment. Infrared absorption measurements on a micro- and macro-scale in combination with computational image processing and analysis were found to meet the requirements of the stated research objectives.


Descriptors :   *SEMICONDUCTORS , *OPTICAL ANALYSIS , *DEFECT ANALYSIS , IMAGE PROCESSING , DENSITY , ANNEALING , MATERIALS , GALLIUM ARSENIDES , STRUCTURES , MATHEMATICAL ANALYSIS , DOPING


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE