Accession Number : ADA262202


Title :   Innovative Optoelectronic Materials and Structures Using OMVPE


Descriptive Note : Annual rept. 1 Jan-31 Dec 1992,


Corporate Author : CORNELL UNIV ITHACA NY


Personal Author(s) : Shealy, James R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a262202.pdf


Report Date : 22 Mar 1993


Pagination or Media Count : 9


Abstract : An advanced OMVPE process is being developed for the deposition of III-V semiconductor materials and structures. There are important optoelectronic device structures which can not be realized by conventional means. The new OMVPE apparatus combines the multichamber reaction cell with deep UV photo-assisted growth and modulation flow epitaxial techniques. Using a combination of such processes, the growth temperature requirements for III-V alloys can be substantially reduced. Selective growth on a sub-micron scale will be attempted with in-situ interference holography. The materials and techniques developed in this research program will result in significant simplifications to the fabrication sequence required to realize complex integrated optoelectronic circuits.


Descriptors :   *EPITAXIAL GROWTH , *SEMICONDUCTORS , *ALLOYS , *CRYSTAL GROWTH , *CIRCUITS , REQUIREMENTS , TEMPERATURE , ELECTROOPTICS , CELLS , SEQUENCES , HOLOGRAPHY , ULTRAVIOLET EQUIPMENT , MODULATION , FLOW , GROUP V COMPOUNDS , GROUP IV COMPOUNDS , GROUP III COMPOUNDS , INTERFERENCE , SCALE , DEPOSITION , MATERIALS , CRYSTALS , STRUCTURES , ELECTRONIC EQUIPMENT , FABRICATION , ORGANOMETALLIC COMPOUNDS


Subject Categories : Inorganic Chemistry
      Electrooptical and Optoelectronic Devices
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE