Accession Number : ADA261954


Title :   Improved Field Emitter Current Densities and Stability Through the Application of a Proprietary Process


Descriptive Note : Quarter rept. no. 3 Sep-Nov 1992


Corporate Author : VARIAN ASSOCIATES INC PALO ALTO CA


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a261954.pdf


Report Date : Nov 1992


Pagination or Media Count : 8


Abstract : As detailed in the previous reports, the necessary current density (60 A/sq cm), linear current density (3 mA/mm) and stability ( 2 days) to meet the contract goals (at least theoretically) have been achieved. The next step is to fabricate three terminal devices to demonstrate the remaining contract goal - a one GHz current gain cutoff frequency (f sub t). Unlike the traditional Spindt-type of emitter where, because of the circularly symmetric nature of the gate, the electrons can be emitted to an anode spaced at quite large distances away, the planar emitter-gate structure used for the single-crystal approach necessitates an anode spacing on the order of several microns to prevent a significant fraction of the emitted electrons from being collected by the gate. Hence the need to fabricate the 3-terminal devices monolithically. This report details the electron trajectory simulations needed for proper design of the three-terminal devices.


Descriptors :   *CURRENT DENSITY , *EMITTERS , FREQUENCY , SIMULATION , STABILITY , SINGLE CRYSTALS , SILICON , ANODES , TERMINALS , TRAJECTORIES , GAIN , ELECTRONS , GALLIUM ARSENIDES , ALUMINUM GALLIUM ARSENIDES , GATES(CIRCUITS)


Subject Categories : Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE