Accession Number : ADA261784


Title :   RF Vacuum Microelectrics


Descriptive Note : Quarterly technical rept. 1 Oct-31 Dec 1992


Corporate Author : HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN


Personal Author(s) : Akinwande, A I ; Bauhahn, P ; Arch, D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a261784.pdf


Report Date : 05 Mar 1993


Pagination or Media Count : 15


Abstract : We summarize our fifth quarter results and discuss plans for the remainder of the baseline program which is to demonstrate a thin film edge emitter triode with 10 micro-A/micrometer emission current density at less than 250V and which can be modulated at 1 GHz for 1 hour. We completed fabrication of the first thin film edge emitter vacuum transistors this quarter. Extensive DC characterization has been carried out. Triode characteristics have been observed on many devices. Low frequency (1 KHz) modulation of the devices has been shown. Parametric testing shows these devices to have the high currents (50 micro-A), high current densities (10 micro-A/mM) and transconductances (1.5 micro-S necessary to achieve 1 GHz operation. High frequency testing is currently underway.... Vacuum microelectronics, Edge emitter, Triode high frequency devices.


Descriptors :   *MICROELECTRONICS , *EMITTERS , FREQUENCY , EMISSION , DENSITY , EDGES , LOW FREQUENCY , TRIODES , MICROMETERS , TRANSISTORS , THIN FILMS , VACUUM , FABRICATION , CURRENT DENSITY , BASE LINES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE