Accession Number : ADA261346


Title :   SiC Microsensor with Piezoresistive Diamond Sensing Elements


Descriptive Note : Final rept. Jul-Dec 1992


Corporate Author : KULITE SEMICONDUCTOR PRODUCTS INC LEONIA NJ


Personal Author(s) : Kurtz, A D ; Shor, J S ; Davidson, J L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a261346.pdf


Report Date : 31 Dec 1992


Pagination or Media Count : 26


Abstract : Advanced microfabrication processes have been developed for novel high temperature pressure sensors utilizing diamond and SiC materials. Such sensors represent a new generation of high temperature piezoresistive sensors. The accomplishments of Phase I include the following: (a) Growth of polycrystalline diamond on Beta-SiC substrates. (b) The first isolated p-type diamond resistive elements grown on intrinsic diamond. (c) Establishment of microfabrication processes for sensor manufacture. (d) Demonstration of a large piezoresistive effect in poly-diamond. (e) Demonstration of a new field- assisted-bonding process which allows dielectrically isolated SiC elements to be formed.


Descriptors :   *DETECTORS , *DIAMONDS , *SILICON CARBIDES , TEMPERATURE , MATERIALS , EPITAXIAL GROWTH , SEMICONDUCTORS , POLYCRYSTALLINE , BONDING , PRESSURE , SUBSTRATES , HIGH TEMPERATURE , DIELECTRICS , FABRICATION


Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Fluid Mechanics


Distribution Statement : APPROVED FOR PUBLIC RELEASE