Accession Number : ADA261178
Title : MOCVD Process Technology for Affordable, High-Yield, High-Performance MESFET Structures. MIMIC Phase 3
Descriptive Note : Final rept.
Corporate Author : SPIRE CORP BEDFORD MA
Report Date : 26 Jan 1993
Pagination or Media Count : 51
Abstract : Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter (3 ) diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.
Descriptors : *METALS , *VAPOR DEPOSITION , *SEMICONDUCTORS , *FIELD EFFECT TRANSISTORS , *CHEMICAL REACTIONS , *WAFERS , HIGH RATE , PERFORMANCE(ENGINEERING) , LAYERS , YIELD , MONOLITHIC STRUCTURES(ELECTRONICS) , MILLIMETER WAVES , SUBSTRATES , MICROWAVES , INTEGRATED CIRCUITS , GALLIUM ARSENIDES , STRUCTURES , EPITAXIAL GROWTH
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE