Accession Number : ADA261154


Title :   Analysis of Transient Photoluminescence Measurements on GaAs and AlGaAs Double Heterostructures


Corporate Author : AEROSPACE CORP EL SEGUNDO CA TECHNOLOGY OPERATIONS


Personal Author(s) : Marvin, Dean C ; Moss, Steven C ; Halle, Linda F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a261154.pdf


Report Date : 13 Jan 1993


Pagination or Media Count : 53


Abstract : We discuss the analysis of transient photoluminescence measurements and the extraction of carrier recombination lifetimes in GaAs and AlGaAs double heterostructures. In contrast to recently reported claims, we demonstrate that even in regions where the measured decay curves show single exponential behavior, the slopes do not, in general, correspond to any single physical carrier lifetime, such as the minority carrier lifetime. A series of measurements over a range of incident optical intensities is required to extract such lifetimes.


Descriptors :   *TRANSIENTS , *PHOTOLUMINESCENCE , *SEMICONDUCTORS , COMPUTERIZED SIMULATION , MEASUREMENT , ONE DIMENSIONAL , EXTRACTION , BEHAVIOR , DECAY , GENES , SLOPE , INTENSITY , CONTRAST , GALLIUM ARSENIDES , ALUMINUM GALLIUM ARSENIDES


Subject Categories : Electrical and Electronic Equipment
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE