Accession Number : ADA260965


Title :   Scanning Tunneling Microscopy of 3-5 Semiconductors


Descriptive Note : Interim technical rept. 1 Jul-31 Dec 1992


Corporate Author : ARIZONA STATE UNIV TEMPE DEPT OF PHYSICS


Personal Author(s) : Dow, John D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a260965.pdf


Report Date : 29 Jan 1993


Pagination or Media Count : 75


Abstract : We report the first scanning tunneling microscopy images with atomic resolution of steps on the (110) surfaces of InAs, InP, and InSb, and we propose models of the surface geometries which lead to those steps. Relaxation of the step edges is interpreted in terms of dimerization of neighboring atoms. These studies of steps provide the basic foundation for future work oriented toward understanding the roles of steps as nucleation centers during growth of nanostructures and the importance of step defects in ultra-small devices, InAs, InP, InSb, Scanning tunneling microscopy.


Descriptors :   *GROUP III COMPOUNDS , *GROUP IV COMPOUNDS , *GROUP V COMPOUNDS , *MICROSCOPY , *SCANNING , *SEMICONDUCTORS , *TUNNELING , ARSENIDES , ATOMIC PROPERTIES , ATOMS , DIMERS , EDGES , GEOMETRY , GROWTH(GENERAL) , IMAGES , INDIUM ANTIMONIDES , INDIUM PHOSPHIDES , MODELS , NUCLEATION , RELAXATION , RESOLUTION , SURFACES , ULTRAHIGH VACUUM


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Atomic and Molecular Physics and Spectroscopy


Distribution Statement : APPROVED FOR PUBLIC RELEASE