Accession Number : ADA260787


Title :   Utilization of an Electronic Circuit Simulator in CMOS Latch-Up Studies


Corporate Author : DEFENCE RESEARCH ESTABLISHMENT OTTAWA (ONTARIO)


Personal Author(s) : Varga, L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a260787.pdf


Report Date : Jun 1992


Pagination or Media Count : 44


Abstract : The 2-D device simulator presented in this work allows the investigation of the effect of ionizing radiation dose rate on the performance of CMOS circuits. The simulator is composed of two parts, a diffusion current module and a lumped-element module. The first module solves the current transport equations with the aid of the HSPICE code. The lumped-element module then simulates the electrical characteristics of the parasitic pnpn structure (present in CMOS circuits) using the results from the first module as input parameters. The model was applied to study the latch-up vulnerability of a CMOS inverter as a function of circuit layout and distribution of substrate contacts. Results of radiation hardening efforts are presented.


Descriptors :   *ELECTRONIC EQUIPMENT , *INTEGRATED CIRCUITS , *UTILIZATION , *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS , SIMULATORS , MODELS , TWO DIMENSIONAL , METAL OXIDE SEMICONDUCTORS , SIGNALS , DIFFUSION , RADIATION HARDENING , TRANSISTORS , INVERTERS , IONIZING RADIATION , BOLTZMANN EQUATION , CURRENTS , DOSE RATE , MODULES(ELECTRONICS) , ELECTRICAL PROPERTIES , SUBSTRATES , VULNERABILITY , CANADA , NUMERICAL ANALYSIS


Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Optics
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE