Accession Number : ADA260396


Title :   Distribution of Trapped Electrons at Interface States in ACTFEL Devices


Corporate Author : OREGON STATE UNIV CORVALLIS DEPT OF ELECTRICAL AND COMPUTER ENGINEERING


Personal Author(s) : Kobayashi, S ; Wager, J F ; Abu-Dayah, A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a260396.pdf


Report Date : Jan 1992


Pagination or Media Count : 7


Abstract : The distribution of trapped electrons at interface states in alternating-current thin-film electroluminescent (ACTFEL) devices is assessed using a new field-stimulated charge measurement technique in which the polarization charge transient is measured experimentally and curve fit using a model for the dynamic emission of electrons from interface states. The trapped electron distribution is relatively small at low energy but rises abruptly at approximately 0.6-0.8 eV below the conduction band minimum for an ACTFEL device with SiON insulators.... ACTFEL, Electroluminescence, Interface states, Electrical characterization, ZnS:Mn.


Descriptors :   *ELECTROLUMINESCENCE , *TRAPPING(CHARGED PARTICLES) , *ELECTRONIC STATES , *ELECTRONS , TRANSIENTS , EMISSION , MEASUREMENT , POLARIZATION , CONDUCTION BANDS , LOW ENERGY , THIN FILMS , ALTERNATING CURRENT , ENERGY , MODELS , DYNAMICS , INTERFACES


Subject Categories : Electricity and Magnetism
      Nuclear Physics & Elementary Particle Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE