Accession Number : ADA260275


Title :   Optical Studies of Laterally Confined Quantum Well Structures Grown on EX-Situ and IN-Situ Patterned Substrates


Descriptive Note : Final rept. 18 Sep 1989-17 Sep 1992


Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Madhukar, Anupam


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a260275.pdf


Report Date : 28 Dec 1992


Pagination or Media Count : 31


Abstract : This final technical report on ARO Contract No. DAAL03-89-K-0170 summarizes the issues examined and the findings related to (1) absorption and electroabsorption behavior of strained GaAs/InGaAs multiple quantum wells (MQW), (2) the dc transport characteristics of strained GaAs/InGaAs/AlAs based resonant tunnelling diodes, and (3) realization of three-dimensionally confined quantum well structures on patterned GaAs(111)B substrates via a one-step growth process labelled substrate encoded sized reducing epitaxy (SESRE). Use of pre-patterned substrates as a means of strain relief without the generation of dislocations is shown to allow growth of high quality MQWs to thicknesses of approx. 1 micron needed for sufficient optical interaction path length in p-i(MQW)-n modulators and detectors. The role of defect induced deep levels in impacting the exciton linewidth through their influence on the internal field distribution is revealed for the first time. Three dimensionally confined GaAs/AlGaAs structures are realized for the first time using SESRE.


Descriptors :   *EPITAXIAL GROWTH , *OPTICAL PROPERTIES , *SEMICONDUCTORS , ABSORPTION , ALUMINUM ARSENIDES , ALUMINUM GALLIUM ARSENIDES , CRYSTAL LATTICES , DEFECTS(MATERIALS) , DETECTORS , DIODES , DISLOCATIONS , ELECTROOPTICS , EXCITONS , GALLIUM ARSENIDES , INDIUM ALLOYS , INTERACTIONS , MODULATORS , MOLECULAR BEAM EPITAXY , OPTICAL IMAGES , QUANTUM WELLS , REDUCTION , RESONANT FREQUENCY , SUBSTRATES , THIN FILMS , TRANSPORT , TUNNELING(ELECTRONICS)


Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE