Accession Number : ADA260192


Title :   RF Vacuum Microelectronics


Descriptive Note : Quarterly Progress Report, No. 5, 1 Oct-31 Dec 1992


Corporate Author : HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN


Personal Author(s) : Arch, David K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a260192.pdf


Report Date : 04 Feb 1993


Pagination or Media Count : 8


Abstract : We summarize our fifth quarter progress towards developing a thin film edge emitter vacuum triode capable of 1 GHz modulation for sustained (1 hour) periods of time. We completed fabrication of the first thin film edge emitter vacuum transistors this quarter. Significant DC characterization of these devices was carried out. Triode characteristics have been observed on many devices. Low frequency (1 KHz) modulation of the devices has been shown. These vacuum transistors have high currents (50 microamps), high current densities (10 microamps/microns) and estimated transconductances of 1.5 microns. Such device parameters are above those required to achieve 1 GHz operation.


Descriptors :   *THIN FILMS , *TRANSISTORS , *TRIODES , DIODES , HIGH FREQUENCY , FABRICATION , MICROELECTRONICS , THIN FILM RESISTORS , EMITTERS , LOW FREQUENCY , MODULATION , TIME , VACUUM , EDGES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE