Accession Number : ADA259773


Title :   Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy


Descriptive Note : Semiannual technical rept. 1 May 1892-30 Apr 1993


Corporate Author : BOSTON UNIV MA DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING


Personal Author(s) : Moustakas, Theodore D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a259773.pdf


Report Date : 30 Oct 1992


Pagination or Media Count : 92


Abstract : Growth and doping of GaN by ECR assisted MBE is reported. We report on the role of the GaN-buffer and AlN-buffer, and their combination on the two dimensional nucleation rate and lateral growth rate. Conditions for quasi layer by layer growth were identified. XRD was used to study secondary phase, the direction and quality of orientational ordering in and out of the substrate, and homogeneous and inhomogeneous strain. Relatively high mobility autodoped films were produced and their transport mechanism was investigated. Intrinsic GaN films were produced and were doped n- and p-type with Si and Mg respectively, without requiring annealing for dopant activation. RIE processing of GaN was developed and metal contacts were investigated. A direct correlation between the metal work function and barrier height was also found.


Descriptors :   *GROWTH(GENERAL) , *FILMS , *EPITAXIAL GROWTH , *CYCLOTRONS , *DOPING , *ELECTRONS , *MOLECULAR BEAM EPITAXY , *ALUMINUM GALLIUM NITRIDES , *GALLIUM NITRIDES , BUFFERS , FUNCTIONS , METALS , MAGNESIUM , ANNEALING , SUBSTRATES , WORK FUNCTIONS , BARRIERS , RESONANCE , SILICON , QUALITY , CORRELATION , PHASE , NITRIDES , NUCLEATION , METAL CONTACTS , HOMOGENEITY , CYCLOTRON RESONANCE , HEIGHT , WORK , TRANSPORT , RATES , SECONDARY , MOBILITY , ACTIVATION , LAYERS , TWO DIMENSIONAL , PROCESSING


Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography
      Particle Accelerators


Distribution Statement : APPROVED FOR PUBLIC RELEASE