Accession Number : ADA259772


Title :   Ion Beam Mixing in Multi-Quantum Well Structures


Descriptive Note : Final rept.


Corporate Author : SURREY UNIV GUILDFORD (UNITED KINGDOM) DEPT OF ELECTRONIC AND ELECTRICAL ENGINEERING


Personal Author(s) : Weiss, Bernard L


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a259772.pdf


Report Date : 20 Sep 1992


Pagination or Media Count : 13


Abstract : The aims of the project were to investigate impurity induced disordering, using ion implantation, for the fabrication of optical waveguides in Aluminum Gallium Arsenide/Gallium Arsenide quantum well structures. Research prior to the initiation of the contract had indicated that the extent of the disordering, as measured by photoluminescence, was determined by both the nature, energy and dose of the implanted ion, and the temperature and time of the annealing process. While encouraging results were obtained for the loss characteristics of disorder delineated stripe optical waveguides, it was clear that not enough was known about the properties of the disordered QW structures to enable low loss disorder delineated strip optical waveguides to be designed and fabricated in AlGaAs/GaAs MQW structures. In addition the impurity chosen to disorder the QW was also of importance and a detailed evaluation of the appropriate ion suggested that some of the less common impurities would probably be more suitable for photonic devices.


Descriptors :   *QUANTUM WELLS , *STRUCTURES , *ION BEAMS , *MIXING , SIGNAL PROCESSING , IONS , OPTICS , ALUMINUM GALLIUM ARSENIDES , FABRICATION , IMPURITIES , STRIPES , ABSORPTION COEFFICIENTS , STARK EFFECT , INDIUM PHOSPHIDES , SPECTRA , OPTICAL WAVEGUIDES , ION IMPLANTATION , PHOTONICS , ELECTRIC FIELDS , REFRACTIVE INDEX , PHOTOLUMINESCENCE , GALLIUM ARSENIDES , TEMPERATURE , ANNEALING


Subject Categories : Inorganic Chemistry
      Optics
      Particle Accelerators
      Quantum Theory and Relativity


Distribution Statement : APPROVED FOR PUBLIC RELEASE