Accession Number : ADA259647


Title :   A Review of Optically Controlled Microwave Devices and Circuits


Descriptive Note : Technical rept. Jun 91-Jun 92,


Corporate Author : ARMY LAB COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY AND DEVICES LAB


Personal Author(s) : Paolella, Arthur


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a259647.pdf


Report Date : Sep 1992


Pagination or Media Count : 32


Abstract : The combining of optical and microwave technology is imminent, especially the integration of optical and microwave circuit functions on the same circuit or chip. Since the MESFET is the main active component of the GaAs MMIC, it makes sense to explore its properties as an optical detector for the detection of microwave and control signals in fiber optic links. This report is a review of the state of the art in the control of microwave devices and circuits by optical means. First, the use of the MESFET as the optical detector for the control of microwave circuits will be reviewed. Then, investigation for the optical control of microwave devices such as the Gunn device, impact ionization avalanche transit time device (IMPATT), high electron mobility transistor (HEMT), and bipolar transistor will be presented. Finally, different types of photodetectors are discussed and compared with the MESFET.


Descriptors :   *INTEGRATION , *PHOTODETECTORS , *OPTICAL DETECTORS , *MICROWAVE OPTICS , *MICROOPTICAL CIRCUITS , FIBER OPTICS , CONTROL , FUNCTIONS , OPTICS , FIBERS , MOBILITY , DETECTION , DETECTORS , IMPACT , ELECTRON MOBILITY , BIPOLAR TRANSISTORS , TRANSISTORS , CIRCUITS , IONIZATION , SIGNALS , STATE OF THE ART , GALLIUM ARSENIDES , MICROWAVES , FIELD EFFECT TRANSISTORS , TIME , ELECTRONS , AVALANCHES


Subject Categories : Electrooptical and Optoelectronic Devices
      Optical Detection and Detectors
      Radiofrequency Wave Propagation


Distribution Statement : APPROVED FOR PUBLIC RELEASE