Accession Number : ADA259642


Title :   Radiation Effects in HEMTs


Descriptive Note : Final rept. 1 Jan 1990-31 Dec 1991


Corporate Author : ATHENS UNIV (GREECE) DEPT OF PHYSICS


Personal Author(s) : Papaioannou, G J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a259642.pdf


Report Date : 31 Dec 1991


Pagination or Media Count : 110


Abstract : Various structure HEMTs have been irradiated with He ions (MeV alpha particle), fast neutrons and Co6O gamma rays. The radiation doze was varied up to 10(exp 13)a/sq cm, 10(exp 16)n/sq cm and 10(exp 7) rads Si. The investigation has been extended on GaAs Layers and AlGaAs/GaAs heterojunctions in order to determine the defects that are induced by radiation in GaAs and AlGaAs. The degradation sources of HEMTs and their dependence on the device layer structure have been determined. A charge control model was, also, employed in order to separate the contribution of donor and buffer layers on the 2DEG degradation. Finally the investigation included a comparative study of MESFET radiation degradation.


Descriptors :   *GALLIUM ARSENIDES , *RADIATION EFFECTS , *HIGH ELECTRON MOBILITY TRANSISTORS , BUFFERS , CONTROL , RADIATION , ALUMINUM GALLIUM ARSENIDES , STRUCTURES , RELIABILITY , PARTICLES , GAMMA RAYS , GREECE , ALPHA PARTICLES , COBALT , FAST NEUTRONS , NEUTRONS , HELIUM , GALLIUM , ARSENIDES , SILICON , DEFECTS(MATERIALS) , ELECTRICAL PROPERTIES , HETEROJUNCTIONS , DEGRADATION , MODELS , LAYERS


Subject Categories : Radiation and Nuclear Chemistry
      Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE