Accession Number : ADA259604


Title :   Formation of Defect-Free Metal/Semiconductor Contacts


Descriptive Note : Final rept. 10 Apr 1986-31 Dec 1991


Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE


Personal Author(s) : Weaver, John H


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a259604.pdf


Report Date : 15 Dec 1992


Pagination or Media Count : 14


Abstract : This program focused on the growth of metallic overlayers on semiconductor surfaces. Its goal was to investigate interface chemistry for a wide variety of metal-semiconductor systems and determine the growth structures produced by varying the metal and the processes of deposition. It was hoped that defect-free interfaces could be created by controlling the chemistry or the growth process itself. Indeed, a novel process involving cluster deposition was developed and shown to give interfaces that were free of conventional semiconductor defects. Throughout this program, we sought to use modern surface science techniques to investigate the chemical and physical properties of metal- semiconductor interfaces. Over a six year period, we were able to amass a large amount of information regarding semiconductor surface disruption induced by the growing metal overlayers, interface intermixing, and overlayer structures.


Descriptors :   *METALS , *SEMICONDUCTORS , *SURFACES , CHEMICAL PROPERTIES , INTERFACES , LAYERS , DEFECTS(MATERIALS) , SYNCHROTRON RADIATION , ELECTROMAGNETIC RADIATION , DEPOSITION , HIGH RESOLUTION , PHYSICAL PROPERTIES , GROWTH(GENERAL) , STRUCTURES


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Electrooptical and Optoelectronic Devices
      Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE