Accession Number : ADA259099


Title :   Growth, Characterization and Device Development in Monocrystalline Diamond Films


Descriptive Note : Annual letter rept. 1 Jan-31 Dec 1992


Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING


Personal Author(s) : Davis, Robert F ; Nemanich, R J ; Trew, R J ; Ailey-Trent, K S ; Bergman, L ; Humphreys, T P ; Kester, D ; More, K L ; Stoner, B R ; Turner, K F


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a259099.pdf


Report Date : Dec 1992


Pagination or Media Count : 64


Abstract : Investigations concerned with bias-enhanced nucleation (BEN) of diamond films revealed that the substrate holder must be diamond coated to achieve this phenomenon. This suggests that some unique property of diamond is responsible for the increased nucleation densities. The carbide-forming substrates tended to nucleate more rapidly than other substrates, thus indicating that the carbide forming nature of the substrate may play an important role. A statistical experimental design was implemented to optimize the process parameters associated with BEN. Continued efforts regarding the surface and interface properties of diamond showed an increased density of impurity-related defects during the initial stages of growth. Angle resolved photo-emission has revealed a negative electron affinity (NEA) on diamond(111) after cleaning and after sub-monolayer deposition of Ti. The Schottky barrier height of Ti on diamond has also been measured. A model is proposed for the observed NEA. The device modeling research on MESFETs was expanded to include MOSFETs and JFETs. The NCSU large-signal FET model was augmented with simulations using Stanford's Pisces IIB simulator. An interface program has been written to couple the NCSU and Stanford models and used to investigate the dc performance of three diamond FETS. Good agreement between measured and simulated data was obtained.... Diamond thin films, Bias-enhanced nucleation, Impurity- related defects, Negative electron affinity, Schottky barrier height, Titanium contacts, Device modeling, MESFET, MOSFET, JFET, cubic-BN, FTIR.


Descriptors :   *FILMS , *DIAMONDS , STRESSES , SIMULATORS , SIMULATION , ANGLES , EMISSION , IONS , DENSITY , COATINGS , SURFACES , INTERSTITIAL , IMPURITIES , NUCLEATION , ION BEAMS , FIELD EFFECT TRANSISTORS , SUBSTRATES , CARBIDES , ION BOMBARDMENT , DEFECT ANALYSIS , JUNCTION TRANSISTORS , MOSFET SEMICONDUCTORS , TRANSISTORS , HEIGHT , BIAS , SCHOTTKY BARRIER DEVICES , CLEANING , HOLDERS , AGREEMENTS , TITANIUM , BARRIERS , SILICON , SIGNALS , PHOTOELECTRIC EMISSION , ELECTRONS , DEPOSITION , CRYSTAL STRUCTURE , MODELS , INTERFACES , PARAMETERS , EXPERIMENTAL DESIGN , GROWTH(GENERAL) , THIN FILMS


Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Coatings, Colorants and Finishes
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE