Accession Number : ADA258768
Title : Field Emitter Array RF Amplifier Development Project. Phase 1, Cathode Technology Development
Descriptive Note : Special technical rept.
Corporate Author : MICROELECTRONICS CENTER OF NORTH CAROLINA RESEARCH TRIANGLE PARK
Personal Author(s) : Sune, C T
Report Date : 17 Nov 1992
Pagination or Media Count : 11
Abstract : The initial RF modulation testing of the gated column silicon field emitter with a diamond coated has been done. It should be noted that we didn't use 50 ohm coaxial cable inside the vacuum chamber for this testing since the configuration was initially used for DC testing, and we wanted to get earlier AC results at this time. It is well known the mismatch of the circuit will give a lot of loss during the RF measuring. This report completes modulation at 0.36 GHz, and even higher performance is expected after full blown AC testing. The DC characteristic, as shown in Fig. 2, of this device is comparable to what we reported from the standard silicon field emitter (2 microns opening at gate and 1 micron height, tip is 1 micron below the bottom of gate electrode, and the tip radius is more than 600 A). The diamond-like film was coated on the silicon tips by remote plasma diamond-like film deposition techniques with a short sputtering etching before deposition and to a thickness of approximate 100 A.
Descriptors : *ARRAYS , *FIELD EMISSION , *SILICON , *RADIOFREQUENCY AMPLIFIERS , TEST AND EVALUATION , GATES(CIRCUITS) , DIAMONDS , VACUUM CHAMBERS , ELECTRON EMISSION , MODULATION , SPUTTERING , DIRECT CURRENT , MICROELECTRONICS , ELECTRODES , DEPOSITION , COATINGS , ETCHING , FABRICATION , FILMS
Subject Categories : Electrical and Electronic Equipment
Coatings, Colorants and Finishes
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE