Accession Number : ADA258485


Title :   Innovative Techniques for the Production of Low Cost 2D Laser Diode Arrays


Descriptive Note : Monthly technical rept. no. 9, 1-30 Oct 1992


Corporate Author : NORTHEAST SEMICONDUCTOR INC ITHACA NY


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a258485.pdf


Report Date : 30 Nov 1992


Pagination or Media Count : 8


Abstract : The primary objective of this program is to develop a low cost, high yielding methodology for processing, packaging and characterization of MBE grown two dimensional high power laser diode arrays. Projected increases in overall yield of AlGaAs diode lasers would reduce manufacturing cost from the current $10 to $20 per peak watt to below $3 per peak watt. Emphasis will be placed on innovative packaging techniques that will utilize recent advances in diamond heat sinking technology.


Descriptors :   *ALUMINUM GALLIUM ARSENIDES , *SEMICONDUCTOR LASERS , *SEMICONDUCTOR DIODES , EPITAXIAL GROWTH , MOLECULAR BEAMS


Subject Categories : Lasers and Masers
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE