Accession Number : ADA258034


Title :   Quarterly Report for ALE Project


Descriptive Note : Quarterly rept.


Corporate Author : IBM RESEARCH LAB YORKTOWN HEIGHTS NY


Personal Author(s) : Gates, S M ; Grutzmacher, D ; Himpsel, F J ; Iyer, S S ; Koleskoe, D D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a258034.pdf


Report Date : Oct 1992


Pagination or Media Count : 51


Abstract : Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures Of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 deg C, film growth rate is roughly 2 monolayer per cycle (one cycle equals l Si2H6 and l Si2Cl6 exposure). At 475 deg C a uniform epitaxial film is obtained, while islanding is observed at higher T. This process is thermally activated and is not strictly self-limiting, but has certain desirable characteristics of atomic layer epitaxy growth.


Descriptors :   *FILMS , *EPITAXIAL GROWTH , *HYDROGEN , *SILICON , *CHLORINE , *GERMANIUM , TEMPERATURE , LAYERS , UNIFORMS , ATOMIC STRUCTURE , SUBSTRATES , SURFACES , CYCLES , RATES , THERMODYNAMICS , THIN FILMS


Subject Categories : Physical Chemistry
      Coatings, Colorants and Finishes
      Properties of Metals and Alloys
      Crystallography


Distribution Statement : APPROVED FOR PUBLIC RELEASE