Accession Number : ADA257907


Title :   Three-Terminal Superconducting Device Research


Descriptive Note : Final rept. 16 Sep 1985-15 Jan 1991


Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY


Personal Author(s) : Gallagher, William J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257907.pdf


Report Date : 18 Sep 1992


Pagination or Media Count : 95


Abstract : The goal of this cost-shared contract research was to investigate potential new three-terminal cryogenic device structures in order to explore new regimes of device physics and ultimately to develop better cryogenic superconducting devices. There were three principal thrusts during the term of this contract: Submicron injection-controlled weak links; ultrashort FET's with superconducting source and drain contacts which induce superconductivity in the channel, and; electric field induced changes in the carrier densities of high-Tc materials. In each case our approach was to fabricate, study, and analyze experimental structures with the aim of understanding device potential. In addition to the above three terminal device thrusts, because of the enormous new opportunity that the discovery of high temperature superconductivity offered, a portion of the contract effort was directed at elucidating the basic properties of these materials with the aim of understanding their device potential.


Descriptors :   *SUPERCONDUCTORS , *FIELD EFFECT TRANSISTORS , *CRYOGENICS , *TRANSISTORS , METALS , DENSITY , INJECTION , SILICON DIOXIDE , MATERIALS , SINGLE CRYSTALS , SEMICONDUCTORS , YTTRIUM , STRONTIUM , BARIUM , HYBRID SYSTEMS , NIOBIUM , ANISOTROPY , COPPER , OXYGEN , LASERS , TERMINALS , ELECTRIC FIELDS , CHARGE CARRIERS , STRUCTURES , HIGH TEMPERATURE , INSULATION , HALL EFFECT , GALLIUM ARSENIDES


Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Electricity and Magnetism
      Thermodynamics


Distribution Statement : APPROVED FOR PUBLIC RELEASE