Accession Number : ADA257684


Title :   RF Vacuum Microelectronics


Descriptive Note : Quarterly technical rept. 1 Jul-30 Sep 1992


Corporate Author : HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN


Personal Author(s) : Akinwande, A I ; Bauhahn, P ; Speldrich, B ; Arch, D


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257684.pdf


Report Date : 29 Oct 1992


Pagination or Media Count : 41


Abstract : We summarize our fourth quarter and discuss fifth quarter plans for the development of an edge emitter based vacuum triode with performance goals of 10 uA/um emission current density at less than 250V and which can be modulated at I GHz for 1 hour. Fabrication of two more process runs of field emitter diodes were completed. Current densities of up to 10 uA/um have now been measured on diode edge emitters. Total current emission of 380 and LA was measured for a thin film edge emitter diode which is a factor of 25 greater than at the start of the program. Based on these results we have designed a diode array structure to achieve the 5 mA total current program requirements. The first fabrication run of this array is completed and now in test. The first fabrication run of the edge emitter vacuum triode was completed this quarter and is also in test. Equivalent circuit and FEM modeling of the vacuum edge emitter triode indicates that we should achieve 1 GHz modulation with gain with the present devices and that the device is mechanically stable.


Descriptors :   *MICROELECTRONICS , *EMITTERS , *TRIODES , TEST AND EVALUATION , DIODES , FREQUENCY , REQUIREMENTS , EMISSION , DENSITY , HIGH FREQUENCY , EDGES , ARCHES , EQUIVALENT CIRCUITS , MODULATION , CIRCUITS , STRUCTURES , THIN FILMS , FILMS , ARRAYS , FABRICATION , CURRENT DENSITY , GAIN


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE