Accession Number : ADA257426


Title :   Laser-Induced Dissociation of HN sub 3 (DN sub 3) on GaAs (100) K


Descriptive Note : Technical rept.


Corporate Author : EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY


Personal Author(s) : Bu, Y ; Ma, L ; Lin, M C


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257426.pdf


Report Date : Jan 1992


Pagination or Media Count : 20


Abstract : HN3 (DN3) molecularly adsorbed on GaAs (100) at 100 K and formed dimers at higher dosages (20 L). Exposing the sample to 308 nm excimer laser radiation caused the dissociation of HN3 into HN and N2 species. The N2, residual HN3 and some HN species desorbed from the surface, as the irradiated sample was further annealed at 200 to 550 K. Both HREELS and XPS results indicated that NH species bonded to the As rather than the Ga atom on GaAs (100) under the present experimental conditions.


Descriptors :   *GALLIUM ARSENIDES , *LASERS , *HYDRAZOIC ACID , *DISSOCIATION , RADIATION , NITROGEN , RESIDUALS , DIMERS , EXCIMERS , DOSAGE , SURFACES , ATOMS , ADSORPTION


Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Lasers and Masers


Distribution Statement : APPROVED FOR PUBLIC RELEASE