Accession Number : ADA257361


Title :   Effects of Processing on MOS Radiation Hardening


Descriptive Note : Technical rept. 27 Aug 1988-17 Aug 1992


Corporate Author : LEHIGH UNIV BETHLEHEM PA


Personal Author(s) : Jaccodine, Ralph J ; Young, Donald R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257361.pdf


Report Date : Sep 1992


Pagination or Media Count : 42


Abstract : This study substantiated the beneficial effects of using fluorine as an additive during the oxidation of silicon for application to Insulated Gate- Field Effect transistor technology. The modern trend towards smaller devices makes it imperative to reduce the time and/or temperature required for the oxidation process. The dramatic increase in oxidation rates resulting from very small fluorine additions suggests the desirability of using fluorine. The results of this study have clearly shown a significant reduction in the strain at the Si-SiO2 interface, and in addition, a reduction in the oxidation enhanced stacking faults in the silicon. Electrical characterization confirmed the conclusion that the rise of fluorine is beneficial. The results are discussed. In the course of this work, a relatively new technique was developed to use Q-V measurements to evaluate the interface and results of these measurements are included. In summary, we are excited about the significant technological improvements that result from the use of fluorine during the oxidation process. Oxidation, Fluorine, Interface Measurements, Point Defects.


Descriptors :   *FIELD EFFECT TRANSISTORS , *METAL OXIDE SEMICONDUCTORS , *RADIATION HARDENING , *SILICON , MEASUREMENT , TEMPERATURE , REDUCTION , OXIDATION , WORK , FAULTS , STACKING , ADDITIVES , FLUORINE , TIME , POINT DEFECTS , INTERFACES , RATES


Subject Categories : Industrial Chemistry and Chemical Processing
      Radiation and Nuclear Chemistry
      Electrical and Electronic Equipment
      Properties of Metals and Alloys


Distribution Statement : APPROVED FOR PUBLIC RELEASE