Accession Number : ADA257295


Title :   Characterization of Semi-Insulating Gallium Arsenide


Descriptive Note : Final technical rept.


Corporate Author : WESTERN WASHINGTON UNIV BELLINGHAM DEPT OF PHYSICS AND ASTRONOMY


Personal Author(s) : Blakemore, John S


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257295.pdf


Report Date : 30 Sep 1992


Pagination or Media Count : 18


Abstract : This project was established effective October 1991, to continue through September 30 1992. Its purpose has been the electrical and oprical characterization of samples from melt-grown crystals of gallium arsenide (GaAs). Almost all of the samples measured during this 12-month period were undoped (nominally undoped), and almost all samples came from crystals grown at NRL by the vertical zone melt (VZM) method. A series of technical reports during the year (when there were new results to report to NRL), plus quarterly reports submitted after 3, 6, and 9 months, provided the bulk of our information to the Crystal Growth Branch of NRL. In this Final Technical Report, a synopsis is provided of that information already submitted on a variety of dates. Measurements made at Western Washington University (WWU) under the terms of this project have been in accordance with a Statement of Work provided at the outset of the project. These include dc low-field electrical transport measurements in semi-insulating (SI) samples, as a function of temperature; observations of time dependent photoconductivity in this SI GaAs; and two types of optical transmittance measurement: in the near-infrared (near-IR) primarily for observation of absorption by EL2 defects, and in the mid-IR for observation of carbon local vibrational mode (LVM) absorption. Examples are provided in this Report of the four above-mentioned types of measurement. The WWU measurements have complemented work at NRL itself, of crystal growth under varied conditions, of low-temperature high resolution mid-IR and far-IR measurements, and of defect structure microscopic studies.


Descriptors :   *GALLIUM ARSENIDES , FUNCTIONS , MEASUREMENT , TEMPERATURE , RESOLUTION , MELTS , SEMICONDUCTORS , HIGH RESOLUTION , REGIONS , INFRARED SPECTRA , CRYSTAL GROWTH , ABSORPTION , WORK , GALLIUM , ARSENIDES , TRANSPORT , TRANSMITTANCE , TIME , PHOTOCONDUCTIVITY , ELECTRICAL PROPERTIES , CARBON , CRYSTALS , STRUCTURES , OBSERVATION , LOW TEMPERATURE , VIBRATION


Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Optics


Distribution Statement : APPROVED FOR PUBLIC RELEASE