Accession Number : ADA257208


Title :   RF Vacuum Microelectronics


Descriptive Note : Quarterly progress status rept. no. 4, 1 Jul-30 Sept 1992


Corporate Author : HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN


Personal Author(s) : Arch, D K


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257208.pdf


Report Date : 16 Oct 1992


Pagination or Media Count : 8


Abstract : We summarize our fourth quarter progress towards developing a thin film edge emitter vacuum triode capable of 1 GHz modulation for sustained (1 hour) periods of time. Current densities of up to 10 uA/um have now been measured on diode structures. Total current emission of 380 mA was measured for a thin film edge emitter diode which is a factor of 25 greater than at the start of the program. A diode array structure was designed to demonstrate the program requirements of 5 mA total current. This array is now in process. The Thin film ordered this quarter and the first fabrication run is completed and now test. Vacuum microelectronics, edge emitter, triode, high frequency devices.


Descriptors :   *THIN FILMS , *TRIODES , TEST AND EVALUATION , DIODES , FREQUENCY , REQUIREMENTS , FILMS , FABRICATION , MICROELECTRONICS , EMITTERS , MODULATION , TIME , ARRAYS , DENSITY , HIGH FREQUENCY , EDGES , STRUCTURES


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE