Accession Number : ADA257047


Title :   Selected Area Epitaxial Growth for Complementary HBT Applications


Descriptive Note : Final rept. 1 May 1989-30 Apr 1992


Corporate Author : ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER


Personal Author(s) : Farley, C W


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a257047.pdf


Report Date : 17 Aug 1992


Pagination or Media Count : 41


Abstract : This report describes the development of a complementary AIGaAs/GaAs heterojunction bipolar transistor (HBT) technology with a highly merged process that simplifies device fabrication without altering or compromising device design. Selected areas molecular beam epitaxy (MBE) was used to monolithically Integrate Npn and Pnp devices. These devices show performance levels comparable to separately processed devices. For the first time, microwave frequency integrated circuits were fabricated from both types of devices on the same water. A digital mask set and the Rockwell baseline digital HBT process were modified to develop a merged process. This process includes the use of a light field emitter to provide passivation which reduces surface recombination at the base-emitter junction. This is the first time that edge passivation, which results in increased gain in Npn devices, has been demonstrated to increase gain in Pnp structures. The merged digital process was designed to maximize the number of steps in which both devices could be processed simultaneously, and the resulting process has only two more mask levels (Pnp base and collector metallization) than the baseline process.


Descriptors :   *ALUMINUM GALLIUM ARSENIDES , *EPITAXIAL GROWTH , *GALLIUM ARSENIDES , ACCUMULATORS , BIPOLAR TRANSISTORS , CIRCUITS , COMMUNICATION EQUIPMENT , DIELECTRICS , DIGITAL SYSTEMS , EDGES , EMITTERS , FABRICATION , FREQUENCY , GAIN , HETEROJUNCTIONS , INTEGRATED CIRCUITS , JUNCTIONS , LIGHT , MASKS , MICROWAVE FREQUENCY , MICROWAVES , MOLECULAR BEAMS , NUMBERS , RADAR , STRUCTURES , SURFACES , TIME , TRANSISTORS , WAFERS , WATER


Subject Categories : Electrical and Electronic Equipment
      Crystallography
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE