Accession Number : ADA256154


Title :   Wide Band Gap Semiconductors Symposium Held in Boston, Massachusetts on 2-6 December 1991. Materials Research Society Symposium Proceedings. Volume 242


Corporate Author : BOSTON UNIV MA


Personal Author(s) : Moustakas, T D ; Pankove, J I ; Hamakawa, Y


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a256154.pdf


Report Date : Jan 1992


Pagination or Media Count : 786


Abstract : Contents: Diamond Growth; Electronic Properties of Diamond and Related Devices; IV-VI Compounds; Theory of Wide Band-Gap Semiconductors; III-V Nitrides and Other III-V Compounds; Silicon Carbide; Boron Nitride and other Boron Compounds; Amorphous and Micro-Crystalline Semiconductors; Chalcopyrites, Oxides, and Halides.


Descriptors :   *SEMICONDUCTORS , *BAND THEORY OF SOLIDS , *CRYSTAL GROWTH , SYMPOSIA , DIAMONDS , HALIDES , GROUP V COMPOUNDS , BORON NITRIDES , PYRITE , GROUP IIVI COMPOUNDS , SILICON CARBIDES , WIDTH , GROUP III COMPOUNDS , NITRIDES , AMORPHOUS MATERIALS


Subject Categories : Crystallography
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE