Accession Number : ADA255935


Title :   Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications


Descriptive Note : Final rept. 1 Apr 1989-31 Mar 1992


Corporate Author : ILLINOIS UNIV AT URBANA-CHAMAPIGN


Personal Author(s) : Stillman, George E ; Holonyak, Jr , Nick ; Coleman, James J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255935.pdf


Report Date : 22 Jun 1992


Pagination or Media Count : 77


Abstract : To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-layered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of Al(x)Ga(l-x)As-GaAs quantum- well heterostructures and the native oxide stabilization of Al(x)Ga(1-x)As-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.


Descriptors :   *SEMICONDUCTORS , STABILIZATION , DIODES , FREQUENCY , HIGH FREQUENCY , DEGRADATION , ELECTROOPTICS , LAYERS , ABSTRACTS , BIPOLAR TRANSISTORS , TRANSISTORS , INDIUM PHOSPHIDES , STRATEGIC DEFENSE INITIATIVE , OXIDES , IMPURITIES , LASERS , CARBON , GALLIUM ARSENIDES , ALUMINUM GALLIUM ARSENIDES , HETEROJUNCTIONS , ARRAYS , VAPOR DEPOSITION , SEMICONDUCTOR DEVICES


Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers


Distribution Statement : APPROVED FOR PUBLIC RELEASE