Accession Number : ADA255901
Title : Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMs
Descriptive Note : Technical rept.
Corporate Author : AEROSPACE CORP EL SEGUNDO CA ENGINEERING AND TECHNOLOGY GROUP
Personal Author(s) : Flesner, L D ; Zuleeg, R ; Kolasinski, W A
Report Date : 16 Jul 1992
Pagination or Media Count : 13
Abstract : We report the results of experiments designed to evaluate the extent to which focused electron-beam pulses simulate energetic ion upset phenomena in GaAs memory circuits fabricated by the McDonnell Douglas Astronautics Company. The results of two experimental methods were compared, irradiation by heavy-ion particle beams, and upset mapping using focused electron pulses. Linear energy transfer (LET) thresholds and upset cross sections are derived from the data for both methods. A comparison of results shows good agreement, indicating that for these circuits electron-beam pulse mapping is a viable simulation technique.
Descriptors : *INTEGRATED CIRCUITS , *ELECTRON BEAMS , *NUCLEAR EXPLOSION DAMAGE , *HEAVY IONS , IONS , ENERGY TRANSFER , PULSES , SHORT RANGE(DISTANCE) , CIRCUITS , IRRADIATION , PARTICLE BEAMS , AIR TO SURFACE MISSILES , TRANSFER , MAPPING , CROSS SECTIONS , PARTICLES , ION BEAMS , GALLIUM ARSENIDES
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE