Accession Number : ADA255901


Title :   Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMs


Descriptive Note : Technical rept.


Corporate Author : AEROSPACE CORP EL SEGUNDO CA ENGINEERING AND TECHNOLOGY GROUP


Personal Author(s) : Flesner, L D ; Zuleeg, R ; Kolasinski, W A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255901.pdf


Report Date : 16 Jul 1992


Pagination or Media Count : 13


Abstract : We report the results of experiments designed to evaluate the extent to which focused electron-beam pulses simulate energetic ion upset phenomena in GaAs memory circuits fabricated by the McDonnell Douglas Astronautics Company. The results of two experimental methods were compared, irradiation by heavy-ion particle beams, and upset mapping using focused electron pulses. Linear energy transfer (LET) thresholds and upset cross sections are derived from the data for both methods. A comparison of results shows good agreement, indicating that for these circuits electron-beam pulse mapping is a viable simulation technique.


Descriptors :   *INTEGRATED CIRCUITS , *ELECTRON BEAMS , *NUCLEAR EXPLOSION DAMAGE , *HEAVY IONS , IONS , ENERGY TRANSFER , PULSES , SHORT RANGE(DISTANCE) , CIRCUITS , IRRADIATION , PARTICLE BEAMS , AIR TO SURFACE MISSILES , TRANSFER , MAPPING , CROSS SECTIONS , PARTICLES , ION BEAMS , GALLIUM ARSENIDES


Subject Categories : Electrical and Electronic Equipment
      Nuclear Weapons


Distribution Statement : APPROVED FOR PUBLIC RELEASE