Accession Number : ADA255706


Title :   The Plasma Properties of Laser-Ablated SiO2


Descriptive Note : Journal article


Corporate Author : FRANK J SEILER RESEARCH LAB UNITED STATES AIR FORCE ACADEMY CO


Personal Author(s) : Wolf, Paul J


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255706.pdf


Report Date : 15 Aug 1992


Pagination or Media Count : 10


Abstract : The optical emission from laser-produced plasmas generated by 1.06 micron irradiation of SiO2 targets at a flux of 7 x 10 to the power of 10(W/sq. cm.) was recorded and analyzed between 250 and 800 nm. The ionization states of Si and O were mapped as a function of both time from the incident laser pulse and location from the front surface of the target. Electron temperatures were calculated using the relative emission intensities of Si(II) and O(II) ionization states (T sub e = 3.4 eV), and an electron number density was determined from the Stark-broadened linewidths of five Si(II) emission lines. The ablated material was collected on Si substrates to examine the particulate nature of the plasma. Thin films were grown in the process and properties of these films were examined using IR reflectance and transmittance spectroscopy, scanning electron microscope analyses, and Auger electron spectroscopy.


Descriptors :   *ABLATION , *SILICON DIOXIDE , *THIN FILMS , *LASERS , *PLASMAS(PHYSICS) , INFRARED DETECTION , EMISSION , REPRINTS , SUBSTRATES , TARGETS , TARGET DETECTION , REFLECTANCE , IRRADIATION , PARTICULATES , IONIZATION , SILICON , SURFACES , TRANSMITTANCE , TIME , ELECTRON SPECTROSCOPY , AUGER ELECTRON SPECTROSCOPY , PULSED LASERS , ELECTRON MICROSCOPES , ELECTRON DENSITY , TEMPERATURE , SCANNING ELECTRON MICROSCOPES , OPTICAL DETECTION , SPECTROSCOPY


Subject Categories : Lasers and Masers
      Infrared Detection and Detectors
      Plasma Physics and Magnetohydrodynamics


Distribution Statement : APPROVED FOR PUBLIC RELEASE