Accession Number : ADA255606
Title : Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor
Descriptive Note : Technical rept.
Corporate Author : TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER
Personal Author(s) : Mahajan, A ; Kinosky, D ; Qian, R ; Thomas, S ; Banerjee, S ; Tasch, A
Report Date : 04 Jun 1992
Pagination or Media Count : 3
Abstract : We have demonstrated silicon Atomic Layer Epitaxy(ALE) using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition (RPCVD) system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures (10 (exp -7) Torr to 1.67 mTorr), temperatures (250 C-400 C) and times (20 sec to 3 min.) without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silyl(SiH3) species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.
Descriptors : *HYDROGEN , *SILICON , *SILANES , *ATOMIC LAYER EPITAXY , *DESORPTION , IONS , TEMPERATURE , DAMAGE , LAYERS , PRESSURE , GLOW DISCHARGES , HELIUM , TIME , SURFACES , EXCITATION , CHEMICAL VAPOR DEPOSITION , SUBSTRATES , CYCLES
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE