Accession Number : ADA255368


Title :   III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)


Descriptive Note : Final rept. 15 Nov 88-31 May 92,


Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING


Personal Author(s) : Holonyak, N , Jr ; Hsieh, K C ; Stillman, G E


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255368.pdf


Report Date : Jun 1992


Pagination or Media Count : 39


Abstract : Since the beginning of this project (10+ years ago) we have been concerned with quantum well heterostructures (QWHs) and their use in advanced forms of lasers, light emitting diodes (LEDs), and more generally in optoelectronics. This has led us into a wide range of studies and discoveries, including the commercially important process (patented) of impurity-induced layer disordering (which can be employed to change a QWH, in whatever pattern desired, from QW lower gap to bulk-crystal higher energy band gap).


Descriptors :   *HETEROJUNCTIONS , *SEMICONDUCTOR LASERS , *LIGHT EMITTING DIODES , *SILICON , DIODES , ENERGY , SEMICONDUCTORS , PATTERNS , BAND THEORY OF SOLIDS , ENERGY BANDS , DOPING , IMPURITIES , LASERS , CRYSTALS , LIGHT , LAYERS


Subject Categories : Lasers and Masers
      Quantum Theory and Relativity
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE