Accession Number : ADA255287


Title :   Gate-All-Around Device


Descriptive Note : Final technical rept. 5 Jul 1991-4 Jul 1992


Corporate Author : INTERUNIVERSITY MICRO-ELECTRONICS CENTER LOUVAIN (BELGIUM)


Personal Author(s) : Smeys, P ; Colinge, J P


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255287.pdf


Report Date : 04 Sep 1992


Pagination or Media Count : 64


Abstract : The gate-all-around device is an SOI MOS field-effect transistor. The gate electrode and the thin gate oxide are wrapped around the active channel region. No other insulator (field oxide or buried oxide) is in contact with the active region of the device. The gate-all-around device exhibits a high transconductance (up to 4 times that of a normal SOI transistor), an ideally sharp subthreshold slope, and demonstrates the concept of volume inversion in the SOI films. Both n-channel and p-channel devices have been fabricated.


Descriptors :   *GATES(CIRCUITS) , *FIELD EFFECT TRANSISTORS , *N TYPE SEMICONDUCTORS , *P TYPE SEMICONDUCTORS , *SILICON ON INSULATOR , *MOSFET SEMICONDUCTORS , FILMS , REGIONS , ELECTRODES , TRANSCONDUCTANCE , CHANNELS , SILICON , SLOPE , INVERSION , CIRCUITS


Subject Categories : Electrical and Electronic Equipment
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE