Accession Number : ADA255242
Title : Thermal Stability of Trimethyl Indium on Si (100)-2x1 As Studied with HREELS, UPS and XPS: A Comparison with the Results from Si(111)-7x7 and Si(110) Studies
Descriptive Note : Technical rept.
Corporate Author : EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY
Personal Author(s) : Chu, Jason C ; Bu, Y ; Lin, M C
Report Date : Jan 1992
Pagination or Media Count : 21
Abstract : The stability of trimethyl indium on the surface of a Si(100)-2xl single crystal has been investigated with UPS, XPS and HREELS. The Si dangling bonds on Si(100)-2xl was found to play an important role in the adsorption of TMIn, probably through the interaction with In 5 pz orbitals and thus causing a distortion and possibly slight dissociation of the In-C bonds. However, the In-C bond breaking occurred to a much smaller extent on the (100) surface, if there is any, than on Si(110) and Si(111)7x7. In the case of the (111) surface, TMIn attacks the adatoms before the rest-atoms. When 1L-dosed samples were annealed at 520 K, the ln-C stretching vibration mode at 62 meV could still be observed in HREELS for TMIn on Si(100)-2xl, but not on the other two surfaces. Above 520 K, the In-C bond cracking was completed. Meanwhile C-H bond breaking also began to occur on the surface, which continued as the sample was further annealed at higher temperatures. At 950 K, only C species left on the surface following the decomposition of TMIn and the desorption of the In and H species.
Descriptors : *COMPARISON , *THERMAL STABILITY , *SILICON , *INDIUM , TEMPERATURE , STABILITY , VIBRATION , SPECTROSCOPY , CRYSTALS , SEMICONDUCTORS , SURFACES , ADATOMS , REST , RECREATION , DECOMPOSITION , DISTORTION , DESORPTION , DISSOCIATION , CHEMICAL BONDS , CARBON , ATOMS , SINGLE CRYSTALS , ATTACK , METHYL RADICALS , INTERACTIONS , ADSORPTION
Subject Categories : Organic Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE