Accession Number : ADA255239
Title : III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides
Descriptive Note : Final rept.
Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Holonyak Jr ,, N ; Hsieh, K C ; Stillman, G E
Report Date : May 1992
Pagination or Media Count : 38
Abstract : Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures (T 550 deg C). However, higher annealing temperatures (T 600 deg C) result in a reduction of the hole concentration reaching a maximum carrier concentration of = 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms: (1) the passivation of carbon acceptors by hydrogen incorporated during growth; and (2) the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.
Descriptors : *GALLIUM ARSENIDES , *ALUMINUM GALLIUM ARSENIDES , *LASERS , FUNCTIONS , DENSITY , SITES , ELECTRICAL PROPERTIES , REDUCTION , HYDROGEN , CARBON , ATOMS , MEASUREMENT , ANNEALING , MOBILITY
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE