Accession Number : ADA255233


Title :   Physics and Technology of Resonant-Tunneling Devices


Descriptive Note : Final rept. 1 May 1989-30 Apr 1992


Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB


Personal Author(s) : Brown, E R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255233.pdf


Report Date : Jul 1992


Pagination or Media Count : 200


Abstract : Over the three-year course of this program, several issues in the device physics of resonant-tunneling diodes (RTDs) have been investigated, including the small-signal admittance, the shot noise, and the transport through multiple-quantum well structures. A large quantum-well inductance has been measured in the negative-differential-resistance region (NDR), but not in the positive-differential-resistance (PDR) region. The microwave shot-noise has been found to be suppressed relative to normal shot-noise in the PDR region, but enhanced in the NDR region. Triple-well RTDs have displayed a much wider NDR region in voltage than conventional single-well RTDs. Several new RTD material systems have been demonstrated including Type-II InAS/AlSb and Type-I GaSb/AlSb, the first of which has yielded excellent properties for high-speed device applications. Studies of highly lattice mismatched InAs/AlSb RTDs on GaAs substrates have proven that the RTD characteristics are insensitive to a high density of dislocations. Finally, these results have been incorporated into the design of RTDs in high-frequency oscillators and high-speed switches. The InGaAs/AlAs RTD has been optimized for application in a quasioptical fundamental-frequency oscillator operating above 200 GHz. The same material system has been used to make a low-power RTD load for heterojunction field- effect and bipolar transistors in high-performance digital integrated circuits.


Descriptors :   *TUNNELING(ELECTRONICS) , *SEMICONDUCTOR DIODES , *NEGATIVE RESISTANCE CIRCUITS , VELOCITY , LOW POWER , OSCILLATORS , STRUCTURES , INTEGRATED CIRCUITS , DISLOCATIONS , HIGH DENSITY , SHOT NOISE , ADMITTANCE , BIPOLAR TRANSISTORS , SWITCHES , INDUCTANCE , TRANSPORT , SIGNALS , SUBSTRATES , MICROWAVES , SUPERLATTICES , DENSITY , HIGH FREQUENCY , HETEROJUNCTIONS


Subject Categories : Electricity and Magnetism


Distribution Statement : APPROVED FOR PUBLIC RELEASE