Accession Number : ADA255126


Title :   Back-Gate Bias Generator.


Descriptive Note : Final technical rept. 5 Jul 91-4 Jul 92,


Corporate Author : INTERUNIVERSITY MICRO-ELECTRONICS CENTER LOUVAIN (BELGIUM)


Personal Author(s) : Smeys, P. ; Colinge, J. P.


Report Date : 04 SEP 1992


Pagination or Media Count : 31


Abstract : The back-gate generator is a small circuit element which allow for the compensation of the threshold voltage shift generated in silicon-on-insulator MOS transistors by ionizing radiations. This device is integrated on a regular SOI chip. It senses the threshold shifts and applies a back-gate voltage designed to nullfy this shift induced by the external harsh environment. Silicon-on-insulator devices and circuits.


Descriptors :   *GENERATORS, CIRCUITS, COMPENSATION, ENVIRONMENTS, EXTERNAL, SILICON, TRANSISTORS, VOLTAGE, INSULATION, IONIZING RADIATION.


Subject Categories : ELECTRIC POWER PRODUCTION AND DISTRIBUTION


Distribution Statement : APPROVED FOR PUBLIC RELEASE