Accession Number : ADA255019


Title :   RF Vacuum Microelectronics


Descriptive Note : Quarterly technical rept. no. 1, 20 Apr-30 Jun 1992


Corporate Author : HUGHES AIRCRAFT CO TORRANCE CA ELECTRON DYNAMICS DIV


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255019.pdf


Report Date : 30 Jun 1992


Pagination or Media Count : 8


Abstract : Since this is the first quarterly progress report, a brief review will be given of the basic Hughes process as developed up through 1990 to create FEAs. Uniform pyramidal tips are defined when a 100 Si substrate is etched through a Si3N4 mask using KOH. The width of the opening determines the depth of this self-limiting etch. The result is a crystallographically sharp pyramidal hole formed by the 111 planes. Any desired array pattern of these holes can be formed. These holes are subsequently thermally oxidized to produce a thin oxide etch barrier, and this etched Si wafer then becomes a 'mold' or negative of the desired array of tips. Polysilicon is deposited into the mold and built up to a self-supporting thickness. The mold is then etched away leaving a array of uniform polysilicon tips on a self-supporting polysilicon substrate.


Descriptors :   *MICROELECTRONICS , MOLYBDENUM , SILICON


Subject Categories : Electrical and Electronic Equipment


Distribution Statement : APPROVED FOR PUBLIC RELEASE