Accession Number : ADA255000


Title :   Growth of Solid Solutions of Aluminum Nitride and Silicon Carbide by Metalorganic Chemical Vapor Deposition


Descriptive Note : Semiannual rept. 25 Nov 1991-1 Jul 1992


Corporate Author : HOWARD UNIV WASHINGTON DC DEPT OF ELECTRICAL ENGINEERING


Personal Author(s) : Jenkins, I ; Irvine, K G ; Spencer, M G ; Dmitriev, V ; Chen, N


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a255000.pdf


Report Date : 27 Aug 1992


Pagination or Media Count : 13


Abstract : We report the growth of solid solutions of (AlN)x(SiC)1-x over the entire composition range from x=0.1 to x=0.9. We believe this is the first report of solid solution of (AlN)x(SiC)1-x by metal organic vapor deposition. Growth was performed in a low pressure vertical reactor using the silane-propane-ammoniatrimethylaluminium-hydrogen gas system on both silicon and silicon carbide substrates. Growth temperatures were between 1200-1250 deg C and growth pressures varied between 10 and 76 Torr. The composition of the solid solutions were strongly dependent on system pressure.


Descriptors :   *CHEMICAL VAPOR DEPOSITION , *SOLID SOLUTIONS , *ALUMINUM NITRIDES , *SILICON CARBIDES , METALS , TEMPERATURE , SUBSTRATES , PROPANE , NITRITES , SILANES , PRESSURE , HYDROGEN , GROWTH(GENERAL) , LOW PRESSURE


Subject Categories : Inorganic Chemistry
      Physical Chemistry


Distribution Statement : APPROVED FOR PUBLIC RELEASE