Accession Number : ADA254801


Title :   GaAs Gate Dynamic Memory Technology


Descriptive Note : Final rept. 1 Feb 1989-31 Dec 1991


Corporate Author : PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING


Personal Author(s) : Melloch, Michael R ; Cooper, Jr, James A


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a254801.pdf


Report Date : Jun 1992


Pagination or Media Count : 88


Abstract : During the course of this work the charge storage times of isolated GaAs pn-junction storage capacitors was increased from 20 minutes to over 10 hours at room temperature. This was accomplished through a combination of improved epitaxy, device processing, and device structure. Furthermore complete DRAM cells were demonstrated using JFET-, MESFET-, MODFET-, and HBT-access transistors. The research supported by this contract has resulted in 21 journal publications and 18 conference papers.


Descriptors :   *GALLIUM ARSENIDES , *FIELD EFFECT TRANSISTORS , *SEMICONDUCTOR JUNCTIONS , *CAPACITORS , *MEMORY DEVICES , TEMPERATURE , CONTRACTS , DOCUMENTS , STORAGE , TRANSISTORS , JUNCTIONS , WORK , ACCESS , ROOM TEMPERATURE , STRUCTURES , CELLS , PROCESSING


Subject Categories : Electrical and Electronic Equipment
      Recording and Playback Devices
      Mechanics


Distribution Statement : APPROVED FOR PUBLIC RELEASE