Accession Number : ADA254773


Title :   MMIC GaAs Bonding Investigation


Descriptive Note : Final technical rept. Aug 1990-Dec 1991


Corporate Author : SYRACUSE UNIV NY OFFICE OF SPONSORED PROGRAMS


Personal Author(s) : Brumberger, H ; Chaiken, J ; Dowben, P A ; Schwarz, J A ; Spencer, J T ; Vook, R W


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a254773.pdf


Report Date : Jun 1992


Pagination or Media Count : 81


Abstract : Results of an investigation into methods of applying thin film technology to improve Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) fabrication and packaging technologies are discussed. Progress in parallel research efforts to better understand the bonding of III-V compounds to substrates, to develop novel thin film deposition methods, and to design and synthesize new source compounds for III-V materials are reported. Techniques investigated include graphoepitaxy, upside-down structures, Ti bonding layers between metal and ceramic, and metal-organic chemical vapor deposition. The resulting interfaces of thin films and bulk materials were characterized in situ, where possible, by spectroscopic and diffraction analysis. A number of significant Rama spectra are provided.


Descriptors :   *GALLIUM ARSENIDES , *RAMAN SPECTROSCOPY , *INTEGRATED CIRCUITS , *EPITAXIAL GROWTH , METALS , SPECTROSCOPY , CHEMICALS , STRUCTURES , FILMS , ARSENIDES , PACKAGING , ORGANIC COMPOUNDS , DIFFRACTION , SPECTRA , DEPOSITION , BULK MATERIALS , SUBSTRATES , MICROWAVES , DIFFRACTION ANALYSIS , NUMBERS , CIRCUITS , BONDING , GROUP III COMPOUNDS , GALLIUM , VAPOR DEPOSITION , FABRICATION , THIN FILMS , INTERFACES , LAYERS , VAPORS , MATERIALS


Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE