Accession Number : ADA240913


Title :   European Conference on Molecular Beam Epitaxy and Related Growth Methods (6th) Held in Tampere, Finland on 21-14 April 1991


Corporate Author : TAMPERE UNIV OF TECHNOLOGY (FINLAND)


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a240913.pdf


Report Date : 24 Apr 1991


Pagination or Media Count : 259


Abstract : Topics covered during this symposium includes: (1) Local growth of silicon MBE layers; (2) Doping during growth; (3) Electrical characterisation for silicon; (4) Design and performance of multiwafer MBE system used in HEMT production; (5) Indium free mounting technique retrofit to a 2 inch in bonded wafer substrate holder; (6) Structure, properties, and purity of pyrolytic boron nitride crucibles; (7) The temperature dependence of the critical layer thickness in in0.36 Ga0.64 As/GaAs single quantum wells; (8) Large piezoelectric fields; (9) In Situ monitoring of III-V MBE growth processes using laser light scattering; (10) In Situ control of epitaxial growth using reflectance difference; (11) Surface stoichiometry variation in atomic layer molecular beam epitaxy of galium arsinide; (12) Influence of growth temperature; and (13) Nonlinear optic in situ diagnostic of crystalline film.


Descriptors :   *MOLECULAR BEAMS , *EPITAXIAL GROWTH , LIGHT SCATTERING , OPTICAL PROPERTIES , TEMPERATURE , SYMPOSIA , PRODUCTION , MONITORING , CRYSTAL LATTICES , GALLIUM ARSENIDES , THIN FILMS , FILMS , SUBSTRATES , CRYSTALS , DIELECTRIC FILMS , LASERS , ELECTRICAL PROPERTIES , VARIATIONS , SILICON , BONDED JOINTS , PIEZOELECTRIC MATERIALS , DIAGNOSIS(GENERAL) , GROUP III COMPOUNDS , GROUP V COMPOUNDS , QUANTUM ELECTRONICS , REFLECTANCE , STOICHIOMETRY , PYROLYSIS , BORON NITRIDES , MOLECULAR BEAM EPITAXY , THERMAL PROPERTIES , EUROPE


Subject Categories : Crystallography
      Atomic and Molecular Physics and Spectroscopy
      Particle Accelerators
      Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE