Accession Number : ADA238198


Title :   Semiconductor Deposition and Etching Interactions of Laser-Generated Translationally Hot Atoms and Radicals


Descriptive Note : Final rept. 1 May 88-30 Apr 91,


Corporate Author : COLORADO UNIV AT BOULDER


Personal Author(s) : Leone, Stephen R


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a238198.pdf


Report Date : May 1991


Pagination or Media Count : 19


Abstract : The goal in the work has been to investigate the microscopic basis for materials removal using neutral atoms and radicals at high kinetic energies (1-10 eV). With support from this ARO grant, it was possible to develop and characterize a new beam source of translationally fast atoms, radicals, and molecules. This beam source is based on a laser vaporization technique. The mechanisms of laser vaporization have been pioneered by many groups in the past several years; the method can be used to produce a variety of reactive neutral atoms, radicals, metal vapors, and other compounds with high kinetic energies. In this work, the laser vaporization process is used to produce a beam source of energetic, reactive neutral species which can be used to study collisions with semiconductor surfaces for fundamental investigations of etching and deposition.


Descriptors :   *SOURCES , INTERACTIONS , MOLECULES , NEUTRAL , MATERIALS , HIGH TEMPERATURE , REACTIVITIES , ATOMS , SEMICONDUCTORS , LASERS , ETCHING , SURFACES , HIGH ENERGY , DEPOSITION , KINETIC ENERGY , COLLISIONS , VAPORIZATION , METAL VAPORS , REMOVAL


Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Particle Accelerators


Distribution Statement : APPROVED FOR PUBLIC RELEASE