Accession Number : ADA216101


Title :   An Overview of Radiation-Induced Interface Traps in MOS (Metal-Oxide Semiconductor) Structures


Descriptive Note : Final rept. 1974-1988


Corporate Author : HARRY DIAMOND LABS ADELPHI MD


Personal Author(s) : Oldham, Timothy R ; McLean, F B ; Boesch, Jr , H E ; McGarrity, James M


Full Text : https://apps.dtic.mil/dtic/tr/fulltext/u2/a216101.pdf


Report Date : Nov 1989


Pagination or Media Count : 35


Abstract : We focus on radiation-induced interface traps, describing first how they fit into the overall radiation response of metal-oxide semiconductor (MOS) structures. Detailed measurements of the time-, field-, and temperature- dependences of the buildup of radiation-induced interface traps indicate three processes by which the buildup occurs. The largest of these is the slow two- stage process described by McLean and coworkers, which is rate limited by the hopping transport of hydrogen ions. Two other faster processes also contribute small interface trap buildups in gate oxides. The processes seem to be controlled by hole transport to the Si/SiO2 interface and by neutral hydrogen diffusion, respectively. We also discuss several models which fall into three classes, corresponding roughly to the three processes observed experimentally. Other topics discussed briefly are dose dependence, field oxide effects, chemical and processing dependences, and scaling effects.


Descriptors :   *METAL OXIDE SEMICONDUCTORS , TRAPS , INTERFACES , NEUTRAL , PROCESSING , GATES(CIRCUITS) , HYDROGEN , OXIDES , SCALING FACTOR , DOSAGE , DIFFUSION , STAGING , RADIATION EFFECTS , IONS , CHEMICALS


Subject Categories : Solid State Physics


Distribution Statement : APPROVED FOR PUBLIC RELEASE